Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
Identifieur interne : 001017 ( Main/Repository ); précédent : 001016; suivant : 001018Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
Auteurs : RBID : Pascal:13-0108797Descripteurs français
- Pascal (Inist)
- Effet volume, Diode, Transport charge, Niveau profond, Impureté résiduelle, Diffusion ambipolaire, Charge espace, Commande courant, Courant porteur, Porteur libre, Densité porteur charge, Caractéristique électrique, Concentration impureté, Mobilité dérive, Méthode analytique, Transistor effet champ, Laser enterré, Faisceau laser, Détecteur rayonnement, Effet Hall, Comportement parasite, Isolant, Silicium, Semiconducteur type n, Semiconducteur type p, Semiconducteur bande interdite large, Jonction silicium, Phosphure d'indium, Composé binaire, Hétérostructure enterrée, 0707D, InP.
- Wicri :
- concept : Isolant.
English descriptors
- KwdEn :
- Ambipolar diffusion, Analytical method, Binary compound, Bulk effect, Buried heterostructures, Buried laser, Carrier current, Charge carrier density, Charge transport, Current control, Deep level, Diode, Drift mobility, Electrical characteristic, Field effect transistor, Free carrier, Hall effect, Impurity density, Indium phosphide, Insulating material, Laser beam, Parasitic behavior, Radiation detector, Residual impurity, Si junctions, Silicon, Space charge, Wide band gap semiconductors, n type semiconductor, p type semiconductor.
Abstract
We analyse the charge transport mechanism in semi-insulating (SI) materials for N-SI-N and P-SI-P structures. The SI layers are large band gap semiconductors obtained by deep levels compensation of residual shallow donors or acceptors. A preceding theory is extended to the case of two, donor or acceptor, deep compensating levels [1]. The conduction mechanism is complex: ambipolar transport, heavy recombination, space charge effect and we show that the current is controlled by both bulk and interface effects at the reverse biased N-SI or P-SI junction. We develop a simple model, without the usual assumption of space charge neutrality, valid up to the beginning of one carrier space charge current. We show that a linear relation exists between the bulk excess free carrier densities and that depending on the value of a quantity M, given as a function of the deep levels electrical parameters, energy position, concentration and capture cross sections, as well as the dopants concentrations, the conduction mechanism is either contact controlled showing a pronounced current saturation effect or bulk controlled with one and for long sample, two, quasi Iinear J-Va relationship. Numerical modelisations of the drift-diffusion transport model confirm these analytical results for the case of one or two compensating deep levels. GaAs (SI) or InP (SI) layers are used for their high resistivity and insulating properties in FET technology, in buried heterostructures, diode laser and in radiation detectors technologies. These results are of importance for the interpretation of conductivity and Hall Effect measurements and explain the parasitic side-gating effect in GaAs or InP MESFET's.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes</title><author><name sortKey="Manifacier, J C" uniqKey="Manifacier J">J. C. Manifacier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Montpellier II - Sciences et Techniques du Languedoc, Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0108797</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0108797 INIST</idno><idno type="RBID">Pascal:13-0108797</idno><idno type="wicri:Area/Main/Corpus">001177</idno><idno type="wicri:Area/Main/Repository">001017</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambipolar diffusion</term><term>Analytical method</term><term>Binary compound</term><term>Bulk effect</term><term>Buried heterostructures</term><term>Buried laser</term><term>Carrier current</term><term>Charge carrier density</term><term>Charge transport</term><term>Current control</term><term>Deep level</term><term>Diode</term><term>Drift mobility</term><term>Electrical characteristic</term><term>Field effect transistor</term><term>Free carrier</term><term>Hall effect</term><term>Impurity density</term><term>Indium phosphide</term><term>Insulating material</term><term>Laser beam</term><term>Parasitic behavior</term><term>Radiation detector</term><term>Residual impurity</term><term>Si junctions</term><term>Silicon</term><term>Space charge</term><term>Wide band gap semiconductors</term><term>n type semiconductor</term><term>p type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet volume</term><term>Diode</term><term>Transport charge</term><term>Niveau profond</term><term>Impureté résiduelle</term><term>Diffusion ambipolaire</term><term>Charge espace</term><term>Commande courant</term><term>Courant porteur</term><term>Porteur libre</term><term>Densité porteur charge</term><term>Caractéristique électrique</term><term>Concentration impureté</term><term>Mobilité dérive</term><term>Méthode analytique</term><term>Transistor effet champ</term><term>Laser enterré</term><term>Faisceau laser</term><term>Détecteur rayonnement</term><term>Effet Hall</term><term>Comportement parasite</term><term>Isolant</term><term>Silicium</term><term>Semiconducteur type n</term><term>Semiconducteur type p</term><term>Semiconducteur bande interdite large</term><term>Jonction silicium</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>Hétérostructure enterrée</term><term>0707D</term><term>InP</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Isolant</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We analyse the charge transport mechanism in semi-insulating (SI) materials for N-SI-N and P-SI-P structures. The SI layers are large band gap semiconductors obtained by deep levels compensation of residual shallow donors or acceptors. A preceding theory is extended to the case of two, donor or acceptor, deep compensating levels [1]. The conduction mechanism is complex: ambipolar transport, heavy recombination, space charge effect and we show that the current is controlled by both bulk and interface effects at the reverse biased N-SI or P-SI junction. We develop a simple model, without the usual assumption of space charge neutrality, valid up to the beginning of one carrier space charge current. We show that a linear relation exists between the bulk excess free carrier densities and that depending on the value of a quantity M, given as a function of the deep levels electrical parameters, energy position, concentration and capture cross sections, as well as the dopants concentrations, the conduction mechanism is either contact controlled showing a pronounced current saturation effect or bulk controlled with one and for long sample, two, quasi Iinear J-V<sub>a</sub> relationship. Numerical modelisations of the drift-diffusion transport model confirm these analytical results for the case of one or two compensating deep levels. GaAs (SI) or InP (SI) layers are used for their high resistivity and insulating properties in FET technology, in buried heterostructures, diode laser and in radiation detectors technologies. These results are of importance for the interpretation of conductivity and Hall Effect measurements and explain the parasitic side-gating effect in GaAs or InP MESFET's.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>80</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes</s1></fA08><fA11 i1="01" i2="1"><s1>MANIFACIER (J. C.)</s1></fA11><fA14 i1="01"><s1>Université Montpellier II - Sciences et Techniques du Languedoc, Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA14><fA20><s1>45-54</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000182577830100</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>52 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0108797</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We analyse the charge transport mechanism in semi-insulating (SI) materials for N-SI-N and P-SI-P structures. The SI layers are large band gap semiconductors obtained by deep levels compensation of residual shallow donors or acceptors. A preceding theory is extended to the case of two, donor or acceptor, deep compensating levels [1]. The conduction mechanism is complex: ambipolar transport, heavy recombination, space charge effect and we show that the current is controlled by both bulk and interface effects at the reverse biased N-SI or P-SI junction. We develop a simple model, without the usual assumption of space charge neutrality, valid up to the beginning of one carrier space charge current. We show that a linear relation exists between the bulk excess free carrier densities and that depending on the value of a quantity M, given as a function of the deep levels electrical parameters, energy position, concentration and capture cross sections, as well as the dopants concentrations, the conduction mechanism is either contact controlled showing a pronounced current saturation effect or bulk controlled with one and for long sample, two, quasi Iinear J-V<sub>a</sub> relationship. Numerical modelisations of the drift-diffusion transport model confirm these analytical results for the case of one or two compensating deep levels. GaAs (SI) or InP (SI) layers are used for their high resistivity and insulating properties in FET technology, in buried heterostructures, diode laser and in radiation detectors technologies. These results are of importance for the interpretation of conductivity and Hall Effect measurements and explain the parasitic side-gating effect in GaAs or InP MESFET's.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F03</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Effet volume</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Bulk effect</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Efecto volumen</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Diode</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Diode</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Diodo</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Transport charge</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Charge transport</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Niveau profond</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" 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